N-channel and p-channel end-to-end finfet cell architecture with relaxed gate pitch

ABSTRACT

A finFET block architecture uses end-to-end finFET blocks in which the fin lengths are at least twice the contact pitch, whereby there is enough space for interlayer connectors to be placed on the proximal end and the distal end of a given semiconductor fin, and on the gate element on the given semiconductor fin. A first set of semiconductor fins having a first conductivity type and a second set of semiconductor fins having a second conductivity type can be aligned end-to-end. Interlayer connectors can be aligned over corresponding semiconductor fins which connect to gate elements.

PRIORITY APPLICATIONS

This application is a divisional of U.S. application Ser. No.13/495,810, filed 13 Jun. 2012 entitled N-Channel and P-ChannelEnd-to-End Finfet Cell Architecture With Relaxed Gate Pitch and isincorporated herein by reference.

BACKGROUND

1. Field of the Invention

The present invention relates to integrated circuit devices, celllibraries, cell architectures and electronic design automation tools forintegrated circuit devices, including finFET devices.

2. Description of Related Art

FinFET style transistors have been described in D. Hisamoto et al.,IEDM, 1998; and N. Lindert et al., IEEE Electron Device Letters, p. 487,2001. FinFETs have gained acceptance recently as the requirements of lowpower and compact layout have become more demanding. In CMOS devices,n-channel and p-channel blocks of transistors are placed in proximity,with insulators in between to prevent latch up, cross-talk and otherproblems.

In the design of integrated circuits, standard cell libraries are oftenutilized. It is desirable to provide a finFET-based design architecturesuitable for implementation of cells for a standard cell library, andfor implementation of integrated circuits using finFET architectureswith flexible layout features.

SUMMARY

For finFET blocks, the channels of the transistors comprise narrow finsthat can be susceptible to warping or other distortion when formed inregions of unbalanced stress, such as can occur at the edges adjacent tothe inter-block insulators. Also, for smaller feature sizes, thereliability of gate conductors traversing the inter-block insulators canbe compromised by the non-uniformity of the structures.

An integrated circuit is described using finFET blocks arrangedend-to-end instead of side-to-side. The integrated circuit includes asubstrate, with a first set of semiconductor fins aligned in a firstdirection on the substrate, the first set configured for one ofn-channel and p-channel finFETs, and a second set of semiconductor finsconfigured for the other of n-channel and p-channel finFETs can bealigned end-to-end on the substrate. An inter-block insulator on thesubstrate, having a first side and a second side, separates thesemiconductor fins in the first and second sets. The ends of the fins inthe first set are proximal to the first side of the inter-blockinsulator and ends of the fins in the second set are proximal to thesecond side of the inter-block insulator. A patterned gate conductorlayer can include a first gate conductor extending across at least onefin in the first set of semiconductor fins, and a second gate conductorextending across at least one fin in the second set of semiconductorfins. In a short channel implementation, wherein the interlayerconnectors have first and second axis contact pitches; the semiconductorfins in the first set can have a first axis finFET block pitch that isabout two times the first axis contact pitch, a second axis fin pitchthat is at least one times the second axis contact pitch.

An integrated circuit is described that includes a substrate, with firstand second sets of semiconductor fins arranged on a grid pattern havingfirst and second axes. The semiconductor fins in the first set can bealigned parallel with the first axis of the grid. The semiconductor finsin the second set of semiconductor fins can be aligned parallel with thefirst axis of the grid. A patterned gate conductor layer can include aplurality of gate elements on corresponding fins in the first and secondsets of semiconductor fins, the gate elements being disposed overchannel regions that separate first and second ends of the correspondingsemiconductor fins. At least one patterned conductor layer overlying thepatterned gate conductor layer, and a plurality of interlayer connectorsconnecting conductors in the at least one patterned conductor layer togate elements in the patterned gate conductor and to the first andsecond ends of the semiconductor fins in the first and second sets offins can be used to interconnect elements of a functional cell. In animplementation with a relaxed gate pitch, wherein the interlayerconnectors have first and second axis contact pitches; the semiconductorfins in the first set can have a first axis finFET block pitch that isat least three times the first axis contact pitch, a second axis finpitch that is at least one times the second axis contact pitch.Therefore, the finFET configuration is laid out to enable interlayerconnections at the source, the gate, and the drain along the fin of aparticular finFET. A relaxed gate pitch in this configuration enablesimplementations of finFET block architectures with finFETs having, forexample, increased channel lengths (to suppress random variations andsuppress off-state leakage), increased the gate-to-source/drain spacerwidths (to reduce parasitic gate-to-drain capacitance), increasedsource/drain sizes (to reduce the S/D contact resistance), orcombinations of some of the above.

FinFET block structures suitable for implementation of a wide variety ofcells, and creation of finFET standard cell libraries for use inintegrated circuit design are described. Technology is described fordeploying design tools for use of finFET block architectures forintegrated circuit design, and as components of electronic designautomation software and systems. Integrated circuits including cellscomprising finFET blocks are described.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a simplified representation of an illustrative integratedcircuit design flow.

FIGS. 2A, 2B and 2C are simplified block diagrams of a computer systemsuitable for use with embodiments of the technology, as well as circuitdesign and circuit embodiments of the technology.

FIGS. 3A and 3B are simplified diagrams showing finFET structures knownin the prior art.

FIG. 4 is a simplified layout diagram of complementary, side-to-sidefinFET blocks suitable for use in the standard functional cell library.

FIG. 4A is a legend applicable to FIGS. 4 and 5.

FIG. 5 is a simplified layout diagram of complementary, end-to-endfinFET blocks suitable for use in the standard functional cell library.

FIG. 6 is a layout diagram of a 1× inverter laid out on side-to-sidefinFET blocks.

FIG. 6A is a legend applicable to FIGS. 6, 7, 8 and 9.

FIG. 7A is a layout diagram of a 1× inverter laid out on end-to-endfinFET blocks.

FIG. 7B is a layout diagram of a 1× inverter laid out on relaxed-gatelength, end-to-end finFET blocks.

FIG. 8 is a layout diagram of a 3× inverter laid out on side-to-sidefinFET blocks.

FIG. 9A is a layout diagram of a 3× inverter laid out on end-to-endfinFET blocks.

FIG. 9B is a layout diagram of a 3× inverter laid out on relaxed-gatelength, end-to-end finFET blocks.

FIGS. 10-12 are cross-section diagrams taken from the layout of FIG. 9A.

FIG. 13 is a layout diagram of a 3-input NAND gate laid out onend-to-end finFET blocks.

FIG. 14 is a layout diagram of a 3-input NAND gate laid out onrelaxed-gate length, end-to-end finFET blocks.

FIG. 15 is a simplified layout diagram of complementary, end-to-endfinFET blocks arranged in a mirror image pattern, suitable for use inthe standard functional cell library.

FIGS. 16A and 16B illustrate layouts for fins in an end-to-end layoutarchitecture like that of FIG. 15, for short channel implementations andlonger channel implementations, respectively.

FIG. 17 is a simplified flow diagram of a process for manufacturing afunctional cell library including designing an end-to-end finFETblock-based functional cell for the functional cell library.

FIG. 18 is a simplified flow diagram for an automated design processutilizing a liquid functional cell library including end-to-end finFETblock-based functional cells as described herein.

DETAILED DESCRIPTION

FIG. 1 is a simplified representation of an integrated circuit designflow. As with all flowcharts herein, it will be appreciated that many ofthe steps of FIG. 1 can be combined, performed in parallel or performedin a different sequence without affecting the functions achieved. Insome cases a rearrangement of steps will achieve the same results onlyif certain other changes are made as well, and in other cases arearrangement of steps will achieve the same results only if certainconditions are satisfied.

At a high level, the process of FIG. 1 starts with the product idea(block 100) and is realized in an EDA (Electronic Design Automation)software design process (block 110). When the design is finalized, thefabrication process (block 150) and packaging and assembly processes(block 160) occur, ultimately resulting in finished integrated circuitchips (result 170).

The EDA software design process (block 110) is actually composed of anumber of steps 112-130, shown in linear fashion for simplicity. In anactual integrated circuit design process, the particular design mighthave to go back through steps until certain tests are passed. Similarly,in any actual design process, these steps may occur in different ordersand combinations. This description is therefore provided by way ofcontext and general explanation rather than as a specific, orrecommended, design flow for a particular integrated circuit.

A brief description of the component steps of the EDA software designprocess (block 110) will now be provided.

System design (block 112): The designers describe the functionality thatthey want to implement, they can perform what-if planning to refinefunctionality, check costs, etc. Hardware-software architectureselection can occur at this stage. Example EDA software products thathave been available from Synopsys, Inc. that could be used at this stepinclude Model Architect, Saber, System Studio, and DesignWare® products.

Logic design and functional verification (block 114): At this stage,high level description language (HDL) code, such as the VHDL or Verilogcode, for modules in the system is written and the design is checked forfunctional accuracy. More specifically, the design is checked to ensurethat it produces the correct outputs in response to particular inputstimuli. Example EDA software products that have been available fromSynopsys, Inc. that could be used at this step include VCS, VERA,DesignWare®, Magellan, Formality, ESP and LEDA products.

Synthesis and design for test (block 116): Here, the VHDL/Verilog istranslated to a netlist. The netlist can be optimized for the targettechnology. Additionally, the design and implementation of tests topermit checking of the finished chip occur. Example EDA softwareproducts that have been available from Synopsys, Inc. that could be usedat this step include Design Compiler®, Physical Compiler, Test Compiler,Power Compiler, FPGA Compiler, TetraMAX, and DesignWare® products.Optimization of design for use of end-to-end finFET blocks as describedbelow can occur in this stage.

Netlist verification (block 118): At this step, the netlist is checkedfor compliance with timing constraints and for correspondence with theVHDL/Verilog source code. Example EDA software products that have beenavailable from Synopsys, Inc. that could be used at this step includeFormality, PrimeTime, and VCS products.

Design planning (block 120): Here, an overall floor plan for the chip isconstructed and analyzed for timing and top-level routing. Example EDAsoftware products that have been available from Synopsys, Inc. thatcould be used at this step include Astro and IC Compiler products.End-to-end finFET block functional cell selection, layout andoptimization can occur at this stage.

Physical implementation (block 122): The placement (positioning ofcircuit elements) and routing (connection of the same) occurs at thisstep. Example EDA software products that have been available fromSynopsys, Inc. that could be used at this step include AstroRail,Primetime, and Star RC/XT products. End-to-end finFET block functionalcell layout, mapping and interconnect arrangements can be implemented oroptimized at this stage using, for example, end-to-end finFET standardfunctional cells based on end-to-end finFET block functional celllayouts described herein.

Analysis and extraction (block 124): At this step, the circuit functionis verified at a transistor level; this in turn permits what-ifrefinement. Example EDA software products that have been available fromSynopsys, Inc. that could be used at this stage include Custom Designer,AstroRail, PrimeRail, Primetime, and Star RC/XT products.

Physical verification (block 126): At this stage various checkingfunctions are performed to ensure correctness for: manufacturing,electrical issues, lithographic issues, and circuitry. Example EDAsoftware products that have been available from Synopsys, Inc. thatcould be used at this stage include the Hercules product.

Tape-out (block 127): This stage provides the “tape-out” data forproduction of masks for lithographic use to produce finished chips.Example EDA software products that have been available from Synopsys,Inc. that could be used at this stage include the CATS(R) family ofproducts.

Resolution enhancement (block 128): This stage involves geometricmanipulations of the layout to improve manufacturability of the design.Example EDA software products that have been available from Synopsys,Inc. that could be used at this stage include Proteus/Progen, ProteusAF,and PSMGen products.

Mask preparation (block 130): This stage includes both mask datapreparation and the writing of the masks themselves. Example EDAsoftware products that have been available from Synopsys, Inc. thatcould be used at this stage include CATS(R) family of products.

Embodiments of the end-to-end finFET block-based technology describedherein can be used during one or more of the above-described stagesincluding, for example, one or more of stages 116 through 122 and 130.Also, end-to-end finFET block technology provides flexibility thatenables the implementation of engineering change orders ECOs, includingmodification of the functional cell sizes during design verificationstages.

FIG. 2A is a simplified block diagram of a computer system 210 suitablefor use with embodiments of the technology. Computer system 210typically includes at least one processor 214 which communicates with anumber of peripheral devices via bus subsystem 212. These peripheraldevices may include a storage subsystem 224, comprising a memorysubsystem 226 and a file storage subsystem 228, user interface inputdevices 222, user interface output devices 220, and a network interfacesubsystem 216. The input and output devices allow user interaction withcomputer system 210. Network interface subsystem 216 provides aninterface to outside networks, including an interface to communicationnetwork 218, and is coupled via communication network 218 tocorresponding interface devices in other computer systems. Communicationnetwork 218 may comprise many interconnected computer systems andcommunication links. These communication links may be wireline links,optical links, wireless links, or any other mechanisms for communicationof information. While in one embodiment, communication network 218 isthe Internet, communication network 218 may be any suitable computernetwork.

User interface input devices 222 may include a keyboard, pointingdevices such as a mouse, trackball, touchpad, or graphics tablet, ascanner, a touchscreen incorporated into the display, audio inputdevices such as voice recognition systems, microphones, and other typesof input devices. In general, use of the term “input device” is intendedto include all possible types of devices and ways to input informationinto computer system 210 or onto communication network 218.

User interface output devices 220 may include a display subsystem, aprinter, a fax machine, or non-visual displays such as audio outputdevices. The display subsystem may include a cathode ray tube (CRT), aflat-panel device such as a liquid crystal display (LCD), a projectiondevice, or some other mechanism for creating a visible image. Thedisplay subsystem may also provide non-visual display such as via audiooutput devices. In general, use of the term “output device” is intendedto include all possible types of devices and ways to output informationfrom computer system 210 to the user or to another machine or computersystem.

Storage subsystem 224 stores the basic programming and data constructsthat provide the functionality of some or all of the EDA tools describedherein, including the end-to-end finFET flexible library and toolsapplied for development of functional cells for the library and forphysical and logical design using the library. These software modulesare generally executed by processor 214.

Memory subsystem 226 typically includes a number of memories including amain random access memory (RAM) 230 for storage of instructions and dataduring program execution and a read only memory (ROM) 232 in which fixedinstructions are stored. File storage subsystem 228 provides persistentstorage for program and data files, and may include a hard disk drive, afloppy disk drive along with associated removable media, a CD-ROM drive,an optical drive, or removable media cartridges. The databases andmodules implementing the functionality of certain embodiments may bestored by file storage subsystem 228.

Bus subsystem 212 provides a mechanism for letting the variouscomponents and subsystems of computer system 210 communicate with eachother as intended. Although bus subsystem 212 is shown schematically asa single bus, alternative embodiments of the bus subsystem may usemultiple busses.

Computer system 210 itself can be of varying types including a personalcomputer, a portable computer, a workstation, a computer terminal, anetwork computer, a television, a mainframe, or any other dataprocessing system or user device. Due to the ever-changing nature ofcomputers and networks, the description of computer system 210 depictedin FIG. 2A is intended only as a specific example for purposes ofillustrating the preferred embodiments. Many other configurations ofcomputer system 210 are possible having more or less components than thecomputer system depicted in FIG. 2A.

FIG. 2B shows a memory 240 such as a non-transitory, computer readabledata storage medium associated with file storage subsystem 228, and/orwith network interface subsystem 216 can include a data structurespecifying a circuit design that includes functional cells from theend-to-end finFET flexible library, or other end-to-end finFETblock-based functional cells as described in detail below. In otherembodiments, the memory 240 stores a functional cell library thatincludes functional cells implemented using a flexible end-to-end finFETblock structure. The memory 240 can be a hard disk, a floppy disk, aCD-ROM, an optical medium, removable media cartridge, or other mediumthat stores computer readable data in a volatile or non-volatile form.The memory 240 is shown storing a circuit design 280 including, forexample, an HDL description of a circuit design that includes one ormore finFET block functional cells created with the described end-to-endfinFET technology, and the described long channel, end-to-end finFETtechnology. FIG. 2C is a block representing an integrated circuit 290created with the described technology that includes one or moreend-to-end finFET block functional cells, and one or more long channel,end-to-end finFET block functional cells selected from a finFET flexiblelibrary.

FIGS. 3A and 3B are simplified illustrations showing finFET structuresin typical silicon-on-insulator and bulk substrate configurations,respectively. Both of these basic structures can be used in theend-to-end finFET block functional cells described herein.

In FIG. 3A, a plurality of fins 301, 302, 303 is disposed on aninsulating substrate 300. The insulating substrate 300 could comprise alayer of insulating material on a bulk semiconductor substrate, such asis employed in silicon-on-insulator integrated circuits, or couldcomprise a bulk dielectric substrate material such as sapphire. The fins301, 302, 303 comprise semiconductor bodies arranged in parallel on thesubstrate 300, so that they extend into and out of page in FIG. 3A. Agate dielectric layer 305 overlies the sides and usually the tops of thefins 301, 302, 303. A gate conductor 307, which can be implemented usingmetal or polysilicon, for example, extends across the fins and over thegate dielectric layer 305.

FIG. 3B shows a plurality of fins 311, 312, 313 which protrude from abulk semiconductor body 310, sometimes referred to as body-tied fins. Inaddition, the individual fins are separated by shallow trench isolationstructures 316, 317. A gate dielectric layer 315 overlies the fins, 311,312, 313. A gate conductor 318 extends across the fins and over the gatedielectric layer 315.

For the embodiments of FIG. 3A and FIG. 3B, on either side of the gateconductor 307, 318, source and drain regions (not shown) are implementedin the fins. The FET transistors that result have source, channel anddrain regions in the fins, and a gate overlying the fins. Suchtransistors are often called multi-gate transistors, because the gateconductor overlies two sides of the fins, and as a result increases theeffective width of the channel. The fins used to implement the finFETtransistors can be quite narrow. For example, fins having widths on theorder of 20 nm or less can be utilized. As a result of the multi-gategate structure and the narrow widths of the fins, finFET transistorshave excellent performance characteristics and small layout areas.

FIG. 4 illustrates complementary, side-to-side finFET blocks in whichfinFET transistors (and other semiconductor devices) can be arranged toimplement functional cells of a flexible finFET functional cell library.FIG. 4A is a legend, applicable to FIG. 4 and FIG. 5, which shows theshading for components of the finFET blocks including the shading forn-channel and p-channel semiconductor fins, the shading for a gateconductor, and the shading for a first metal layer (metal-0).

The layout in FIG. 4 illustrates a repeatable pattern of side-to-sidefinFET blocks, suitable for implementation of functional cells usingcomplementary p-channel and n-channel transistors, known as CMOStransistors. The pattern includes a p-channel block 402, and ann-channel block 403. Isolation structure 426 separates the p-channelblock 402 from the n-channel block 403. The p-channel block 402 includesarea allocated for a set of fins, including fin 404, to be laid out inparallel on the substrate. The set of fins in the p-channel block 402shown in the illustration includes seven members when all the allocatedarea is utilized. The number of members in the set of fins for whicharea is allocated in any given finFET block can vary according to theneeds of a particular implementation. The fins can be implemented on aninsulating layer, or protrude from an underlying semiconductor body (notshown), as discussed above.

The n-channel block 403 includes a set of fins, including fin 405, themembers of which are laid out in parallel on the substrate. The set offins in the re-channel block 403 shown in the illustration includesseven members when all the allocated area is utilized. Although thedrawings herein show that the n-channel blocks and the p-channel blockshave area allocated for equal numbers of fins, implementations of thetechnology can use different numbers of fins in the various blocks. Thenumber of members in the set of fins for which area is allocated in anygiven finFET block can vary according to the needs of a particularimplementation. As with the p-channel block, the fins in the n-channelblock can be implemented on an insulating layer, or protrude from anunderlying semiconductor body (not shown), as discussed above.

As illustrated, the block layout of FIG. 4 shows side-to-side finFETlayout, where fins 404 and 405 proximal to the opposing sides ofisolation structure 426 have parallel sides 406 and 407, respectively,which are adjacent to the isolation structure 426.

A patterned gate conductor layer overlies the fins, and includes gateconductors (shown with “gate” shading) in the plurality of finFET blocksshown in the diagram arranged along columns. The number of columns canbe selected as suits a particular implementation. The p-channel block402 includes gate conductors, including gate conductor 410, which areelements of the patterned gate conductor layer, and are disposed overand orthogonal to the set of fins in the blocks 402 and 403, and extendacross the isolation structure 426. In alternative embodiments, the gateconductor 410 can be implemented using separate conductors in eachblock, which can be connected using patterned metal layers in overlyinglayers.

The isolation structure 426 is positioned between the p-channel block402 and the n-channel block 403. The isolation structure 426 can be usedto prevent current leakage as a result of parasitic transistors and thelike which may otherwise result from the CMOS functional cell layout. Inone example, the isolation structure 426 is an insulator filled trench,in a semiconductor substrate, the width and/or the depth of which can bethe same as, or greater than, the widths or depths of the trenchesbetween the fins within the blocks of fins. In some embodiments, theisolation structure can include components that are designed to reduceor balance stress on the sides 406 and 407 of the fins proximate to theisolation structure.

In this example, a patterned conductor layer (metal-0) is laid out withthe patterned gate conductor layer that includes the gate conductors(e.g. 410). Metal-0 conductors 412, 413 can be power conductors used toconnect selected fins to power (VDD) and ground (VSS) rails. Inalternative structures, VDD and VSS power conductors can be implementedusing higher layer (e.g. metal-1 or metal-2) conductors, and can beconnected in turn to metal-0 conductors 412 and 413 in a standardfunctional cell layout.

A power conductor, or a power rail, as used herein is a conductor in apatterned conductor layer that is used primarily to deliver power supplyvoltages, commonly referred to as VDD or VSS, to the elements of acircuit. The VDD voltage and the VSS voltage for a given block may bethe same as or different from the VDD voltage and the VSS voltage foranother block, or for other circuits on the same integrated circuit.

At least one patterned conductor layer (metal-1, metal-2, etc.) overliesthe patterned gate conductor layer in embodiments of the technologydescribed here. In FIG. 4, these patterned conductor layers are omittedfor ease of illustration of the basic side-to-side layout for finFETblocks. The conductors in the first patterned conductor layer can beadvantageously arranged parallel to the gate conductors in the patternedgate conductor layer, and orthogonal to the fins. This facilitates theuse of the first patterned conductor layer for interconnecting gateconductors and source/drain regions along columns in the adjacentblocks.

The finFET blocks can be arranged on a grid pattern, where the gridpattern has grid cells that are sized to accommodate the horizontal andvertical contact pitches for the integrated circuit technology beingapplied, where the contact pitch provides room in the layout forinterlayer connectors between the gate conductors or the fins, andoverlying patterned conductor layers. In a representative grid pattern,the gate conductors are arranged in parallel and spaced apart so thatone gate conductor falls within each grid cell, allowing room for thehorizontal pitch of interlayer connectors to contact each gateconductor. Also, the fins are arranged in parallel and spaced apart sothat one finFET falls within each grid cell, allowing room for thevertical pitch of interlayer connectors to contact each gate conductor.The metal-0 connectors that are connected to fins between gateconductors can be formed between gate conductors in some embodimentswithout increasing the horizontal pitch requirements, as shown in thefigure. In some implementations, the horizontal and vertical pitches forthe grid cells can be different, and defined using the layoutspecifications for particular manufacturing technologies and layoutarchitectures.

FIG. 5 illustrates complementary, end-to-end finFET blocks in whichfinFET transistors (and other semiconductor devices) can be arranged toimplement functional cells of a flexible finFET functional cell library,in contrast to the side-to-side finFET blocks of FIG. 4. The legend inFIG. 4A is applicable to the layout drawing in FIG. 5.

The layout in FIG. 5 illustrates a repeatable pattern of end-to-endfinFET blocks, suitable for implementation of functional cells usingcomplementary p-channel and n-channel finFET transistors, known as CMOSfinFET transistors. The pattern includes a p-channel block 422 and ann-channel block 423. Isolation structure 440 having opposing first andsecond sides 442, 443, separates the p-channel block 422 and then-channel block 423. The p-channel block 422 includes a set of fins,including fin 424, the members of which are laid out in parallel on thesubstrate. The n-channel block 423 includes a set of fins, including fin425, the members of which are laid out in parallel on the substrate. Thefins in the n-channel block 423 and in the p-channel block 422 arearranged end-to-end. Thus, for example, fin 424 in the p-channel block422 has a first end 426 and a second end 428. The first end is adjacentto, or proximal to, a first side 442 of the inter-block isolationstructure 440. The fin 424 extends away from the inter-block isolationstructure 440 in a first direction, so that the second end 428 is distalto the inter-block isolation structure 440. The fin 425 in the n-channelblock 423 has a first end 427 and a second end 429. The first end 427 isadjacent to, or proximal to, a second side 443 of the inter-blockisolation structure 440. The fin 424 extends away from the inter-blockisolation structure 440 in a first direction, so that the second end 428is distal to the inter-block isolation structure 440.

The set of fins in the p-channel block 422 shown in the illustrationincludes 11 members. The number of members in the set of fins making upa given finFET block can vary according to the needs of a particularimplementation. The fins can be implemented on an insulating layer, orprotrude from an underlying semiconductor body (not shown), as discussedabove.

The set of fins in the n-channel block 423 shown in the illustrationincludes 11 members, which is the same as the number for the p-channelblock 422. Although the drawings herein show that the n-channel block423 and the p-channel block 422 have equal numbers of fins,implementations of the technology can use different numbers of fins inthe various blocks. The fins can be implemented on an insulating layer,or protrude from an underlying semiconductor body (not shown), asdiscussed above.

In this example, a patterned conductor layer (metal-0) is laid out withthe patterned gate conductor layer that includes the gate conductors(e.g. 430, 432). Metal-0 conductors 450, 451 can be used to connectselected fins to VDD and VSS power conductors in other layers of thedevice, which can be connected in turn to metal-0 conductors 450 and 451in a standard functional cell layout. In alternative structures, VDD andVSS power conductors can be implemented using higher layer (e.g. metal-1or metal-2) conductors.

FinFET structures are desirable because of the improved transistorperformance that can be achieved within a given layout area. FinFETblock designs take advantage of the finFET structure to createfunctional cells that have a “quantized” performance, which can becontrolled by connecting and disconnecting fins from a functional cellto change the effective channel widths, and therefore the transistorstrengths, of finFETs in the logic design. However, issues that canarise in the design of side-by-side blocks as illustrated in FIG. 4because of the asymmetric stress induced on the fins on the edges of theblocks. The asymmetric stress causes structural warping and crackingfailures during manufacture, and performance variations across thearray. These problems become more pronounced as the fin widths shrinkbelow 20 nm. Further reductions in width begin to create problems withmechanical stability of the fins, particularly when the isolation widthor depth is different on the two sides of the fin. For example,referring to FIG. 4, fin 404 has a narrow isolation structure above it,but a much wider isolation structure 426 below it, towards fin 405. Dueto the inherent stresses in the isolation materials, such as HDP oxide(High Density Plasma Chemical Vapor Deposition CVD process), or SOGoxide (Spin-On-Glass), or flowable CVD oxide (CVD process with flowablematerial), the isolation structures with different widths and/or depthsimpose different forces on the two sides of fin 404. A large forceimbalance may cause dislocation formation or cracking of the fin 404,making the transistors non-functional.

Also, as illustrated in FIG. 4, the semiconductor fins in theside-by-side blocks are often implemented to have different numbers offinFETs per line. Thus, the blocks can include longer semiconductorfins, like fin 405, and shorter semiconductor fins, like fin 415. Longerfins (like 405) can have better performance due to the possibility ofstronger or more uniform stress engineering there, but the transistorsin the shorter fins (like fin 415) can have weaker performance due tothe possibility of stress relaxation there.

The block layout in FIG. 5 shows an end-to-end finFET layout, where fins424 and 425 have respective ends proximal to corresponding sides 442,443 of the isolation structure 440. In the layout illustrated in FIG. 5,the set of fins in the p-channel block 422 are aligned end-to-end withthe set of fins in the n-channel block 423, so that the outside sides ofthe fins 424 and 425 are aligned with one another. In alternativeimplementations, the fins in the p-channel block 422 can be offsetrelative to fins in the set of fins in the n-channel block 423, so thatthe outside sides of the fins 424 and 425 may be offset yet arrangedend-to-end and extending in the same direction.

End-to-end layouts substantially reduce the problems mentioned abovethat arise using the side-to-side block layout. For example, the end ofa fin (e.g. end 426 of fin 424) might encounter asymmetric stressproximal to the inter-block isolation structure, as compared to stressfrom power conductor structures on the distal end. However, the ends ofthe fins are structurally suited to absorb the stress without impactingthe structural integrity of the fin, without causing warping, andwithout causing significant variations in stress on the channels of thefinFETs in the block. Also, stressor structures as illustrated below canbe formed on the ends of the fins, or between the ends of the fins andthe gate conductors. Furthermore, the fins aligned end-to-end like onFIG. 5 can be all of the same length, which means that they can all havenominally the same amount of stress and therefore they all havenominally the same performance. This eliminates the strong stressproximity effects that are inherent in the side-to-side fin placementlike the one shown on FIG. 4 due to the different fin lengths.

In the layout of FIG. 5, a patterned gate conductor layer includes afirst gate conductor 430 over the p-channel block 422, and a second gateconductor 432 over the n-channel block 423. The first gate conductorextends over at least one of the fins (e.g. fin 424) in the p-channelblock 422. In this example, first gate conductor 430 is shown extendingover all of the fins. Likewise, the second gate conductor 432 extendsover at least one of the fins (e.g. fin 425) in the n-channel block 423.

FIG. 5 shows end-to-end blocks that include only one gate conductor(e.g. horizontal conductors 430, 432), in contrast to the side-to-sideblocks shown in FIG. 4 which include multiple gates conductors in eachblock (e.g. vertical conductors like gate conductor 410). In otherembodiments, there can be more than one horizontal gate conductor in anend-to-end block. However, in the end-to-end block arrangement describedherein, advantageous embodiments use a single gate conductor in eachblock and multiple end-to-end fins.

FIG. 6 illustrates a 1× inverter that comprises a single pull-uptransistor in the p-channel block and a single pull-down transistor inthe n-channel block laid out in a side-to-side finFET block. Theinverter shown in FIG. 6, uses only one transistor in each block, eachtransistor having a width equal to one times the width of a fin, and canbe referred to therefore as a 1× inverter.

FIG. 6A is a legend, applicable to FIG. 6, FIG. 7A, FIG. 7B, FIG. 8,FIG. 9A, FIG. 9B, and FIGS. 13-14, that shows the shading for componentsof the finFET blocks including the shading for n-channel and p-channelsemiconductor fins, the shading for a gate conductor, and the shadingfor a first metal layer (metal-0), a second metal layer (metal-1), and athird metal layer (metal-2). The metal-1 and metal-2 layers arepatterned conductor layers that overlie the patterned gate conductorlayer. The metal-0 layer is beneath the metal-1 and metal-2 layers, andcan lie in the same layer of the integrated circuit as the patternedgate conductor layer. The metal-0 layer can make direct contact tosource/drain regions on the fins and direct contact to gate conductors.Also, the symbols for two types of interlayer connectors, such as vias,interconnecting the layers are represented in the figure. Interlayerconnectors represented by a square with a single cross line from thelower left corner to the upper right corner connect the conductors inthe first patterned conductor layer (metal-1) to source/drain regions onthe fins. Interlayer connectors represented by a square with an “X”pattern of crossed lines, connect the conductors in the second patternedconductor layer (metal-2) to conductors in a lower patterned conductorlayer (e.g., metal-0) or a patterned gate conductor layer. Of course, inmany integrated circuit technologies which can be used to implement theend-to-end finFET technologies described herein, more than threepatterned conductor layers can be utilized.

The pull-up transistor in the p-channel block is laid out using a singlefin 604 having a drain terminal coupled to a metal-0 conductor 620 and asource terminal coupled to metal-0 conductor 622. The metal-0 conductor620 is connected to a metal-2 conductor 630, at which the output signalof the inverter is supplied. The metal-0 conductor 622 is connected tothe metal-0 conductor 624, which is in turn coupled to a VDD powerconductor. The pull-down transistor in the n-channel block is laid outusing a single fin 605, having a drain terminal coupled to the metal-0conductor 620, and a source terminal coupled to the metal-0 conductor623. The metal-0 conductor 623 is connected to the metal-0 conductor625, which is in turn coupled to a VSS power conductor. The patternedgate conductor layer includes gate conductor 610 which extends acrossfin 604 and across the fin 605. The gate conductor 610 which extendsacross the p-channel block and the n-channel block in this layout, isconnected to a metal-1 connector 631, at which the input to the inverteris supplied. Gate conductors 612 and 614 are “dummy gates,” which can beused in block layouts for a variety of reasons. Because of the use ofthe metal-0 conductors 622, 623 and 620, the pitch associated with thesegate conductors is included in the area for the grid cell.

In this example, the n-channel block and the p-channel block areconfigured for three fins each as represented by the region 606 in thep-channel block and the region 607 in the n-channel block, to facilitateimplementation of up to three parallel finFET transistors. However, the1× inverter uses only one fin in each block; the area used in thestandard block layout for these two additional fins is unused.Nonetheless, the total area for the layout of a 1× inverter usingside-to-side blocks as illustrated can be represented by the count ofvertical pitches, where one contact pitch is represented by the symbol“λ,” times the count of horizontal pitches, also represented by “λ.” Ascan be seen, assuming the inter-block isolation structure does notconsume more than one contact pitch, there are eight vertical contactpitches and three horizontal contact pitches needed to implement the 1×inverter. The total area is therefore 8×3 contact pitches, or 24λ².

FIG. 7A illustrates a 1× inverter layout in an end-to-end finFET block,in contrast to the side-to-side layout of FIG. 6. The pull-up transistorin the p-channel block is laid out using fin 704 having a sourceterminal coupled to the metal-0 conductor 724, and a drain terminalcoupled to the metal-0 conductor 720. The metal-0 conductor 720 isconnected to a metal-2 conductor 730, at which the output signal of theinverter is supplied. The metal-0 conductor 724 is connected to a powersupply, which can be routed through other patterned conductor layers.The pull-down transistor in the n-channel block is laid out using thefin 705, having a drain terminal coupled to the metal-0 conductor 720,and a source terminal coupled to the metal-0 conductor 725. The metal-0conductor 725 is connected to a VSS power conductor. The patterned gateconductor layer includes gate conductor 708 in the p-channel block, andgate conductor 710 in the n-channel block. The gate conductor 708 andthe gate conductor 710 are arranged in parallel, and cross over the fins704 and 705, respectively. The metal-0 conductor 728 is connected fromthe gate conductor 708 to the gate conductor 710. The metal-0 conductor728 is connected to a metal-1 conductor 731, at which the input to theinverter is supplied. Thus, metal-0 conductor 728 is an embodiment of aninter-block conductor parallel to, and adjacent to, one of thesemiconductor fins in the first set and one of the semiconductor fins inthe second set, where the inter-block conductor connects the first gateconductor to the second gate conductor. Metal-0 conductor 728 canoverlie end-to-end semiconductor fins in the first and second sets ofsemiconductor fins included in the p-channel and n-channel blocks, andconsume the pitch of a single semiconductor fin in the layout.Alternatively, the metal-0 conductor can be placed in area allocated inthe grid pattern for metal-0 inter-block conductors, and in whichsemiconductor fins are not present.

The 1× inverter shown in FIG. 7A is laid out using end-to-end finFETblocks which can be laid out in a much smaller area than that of theinverter of FIG. 6, which is laid out using side-to-side finFET blocks.As illustrated, the inverter of FIG. 7A includes four contact pitches inthe vertical direction and two contact pitches in the horizontaldirection, for a total area of 4×2 contact pitches, or 8λ², or 8 gridcells. This example shows that the end-to-end finFET block layout can beused to implement 1× inverters using one third of the layout area of aside-to-side finFET block layout, based on three parallel fins in eachblock.

The layout of one finFET transistor in each block per fin as shown inFIG. 7A can result in a finFET block that has a finFET block pitch(alternatively referred to as a block pitch) on the y-axis, that isequal to twice the contact pitch λ. Thus, the one-transistorconfiguration of the end-to-end architecture can fit in a layout gridwith per-vertical block pitch of 2λ, assuming that the inter-blockisolation structure can be implemented within a single contact pitch λ.

FIG. 7B illustrates a 1× inverter implemented using an end-to-end finFETlayout architecture having a relaxed-gate length finFET configuration.The pull-up transistor in the p-channel block is laid out using fin 750having a source terminal coupled to the metal-0 conductor 752, and adrain terminal coupled to the metal-0 conductor 756. The metal-0conductor 756 is connected by an interlayer connector to a metal-1conductor 762, at which the output signal of the inverter is supplied.The metal-0 conductor 752 is connected to a power supply, which can berouted through other patterned conductor layers. The pull-downtransistor in the n-channel block is laid out using the fin 751, havinga drain terminal coupled to the metal-0 conductor 756, and a sourceterminal coupled to the metal-0 conductor 753. The metal-0 conductor 753is connected to a VSS power conductor. The patterned gate conductorlayer includes gate element 754 in the p-channel block, and a gateelement 755 in the n-channel block. Gate elements 754 and 755 areconnected by respective interlayer connectors to a metal-2 conductor758, which connects the gate elements 754 and 755 together. In thisexample, an input signal is supplied on the metal-2 conductor 760, whichis connected to, or part of, a continuous conductor with the metal-2conductor 758. Interlayer connectors 780 and 781 are aligned overcorresponding semiconductor fins 750 and 751 and connect to the gateelements 754 and 755. Interlayer connector 782 is aligned with the finsin a region over the inter-block isolation structure (not shown) in thisfunctional cell. However, the layout allows room for interlayerconnectors to be aligned over corresponding semiconductor fins 750 and751 and connect to the source/drain regions on the semiconductor fins,as can be seen, for example, by the area allocated for the metal-3conductor 760, and by the area allocated for connection on the opposingends of the fins to the conductors 752 and 753. Because metal-2conductor 758 overlies the metal-1 conductor 762, the layout for thisinverter cell could require an extra horizontal contact pitch asillustrated, to allow for connection of the output conductor 762 tohigher layer patterned conductors, because it may be difficult toutilize the adjacent fin for another functional cell.

In some embodiments, the semiconductor fin 750 and the semiconductor fin751 are members of respective first and second sets of the semiconductorfins which are arranged in a grid pattern. The fin 750 and other fins inthe first set of fins are aligned parallel with the first axis (i.e.,y-axis) of the grid. Likewise the fin 751, and other fins in the secondset of fins, are aligned in parallel with the first axis of the grid.The gate elements in the patterned gate conductor layer are disposedover channel regions in the first and second fins 750, 751. The channelregions, having lengths that can correlate with the sizes of the gateelements, separate the first and second ends of the correspondingsemiconductor fins. The first and second ends of the correspondingsemiconductor fins can include source and drain regions of the finFETtransistors, and may include stressor structures and the like asdiscussed below.

The gate elements 754 and 755 are positioned within an area on the gridlarge enough to accommodate an interlayer connector. Thus, in the layoutof the relaxed-gate length finFET configuration of FIG. 7B, each fin hasa first axis finFET block pitch λ_(F) which is at least three times thecontact pitch λ, so that there is sufficient area for contact to thesource, drain and the gate of each finFET transistor. Although in thediagram the first axis finFET block pitch for both the first set of finswhich includes fin 750, and the second set of fins which includes fin751 are labeled λ_(F). In practice, the first axis finFET block pitchfor the first and second sets of fins may be different if necessary, forexample, to support varying characteristics of n-channel and p-channelfinFET transistors.

Also, the inter-block isolation structure (not shown) in both FIGS. 7Aand 7B, has a width that is the same as the y-axis contact pitch in thisexample, allowing a finFET block pitch along a first axis of at leastthree times the contact pitch. In other embodiments, the inter-blockisolation structure can have a width that is an integer multiple of they-axis contact pitch, or can have a width that is a non-integer multipleof the y-axis contact pitch. Of course the width of the inter-blockisolation structure will have an effect on the finFET block pitch in aconfiguration of this type.

Also in the end-to-end finFET configuration of FIGS. 7A and 7B, each finhas a second axis fin pitch which is equal to at least the second axiscontact pitch λ, in order to achieve high density. In other embodiments,the second axis contact pitch can be different from the second axis finpitch.

Embodiments of the relaxed-gate length end-to-end finFET configurationillustrated in FIG. 7B can be arranged for a single finFET transistor oneach fin. In such embodiments, the length of each fin can be less thanthree times the first axis contact pitch, including, for example abouttwo times the first axis contact pitch.

The finFET block for the end-to-end finFETs, in the configuration ofFIG. 7B, is extended, relative to that of the configuration of FIG. 7A,thereby accommodating larger gates. In the configuration of FIG. 7B,there are two contact pitches between the mid-source and mid-drain. Thisspace can be filled with: half source, spacer between source and gate,gate, spacer between drain and gate, and half drain, which togethercomprise the length on the fin allocated for a source/drain terminal, orthe average of a source terminal and a drain terminal, which we canlabel as “S/D,” the length along the fin allocated to two spacers, ortwice the average of a source/gate spacer and a drain/gate spacerwidths, which we can label as “2*Sp,” and the length along the finallocated for the gate, which we can label as “G.” This provides afinFET block pitch of (S/D+2*Sp+G). The finFET block can be configuredin a number of ways to fill the two-contact-pitch space. One option isto double, or proportionally expand, each of the S/D, Sp and G sizeswith respect to FinFETs configured as shown in FIG. 7A (with a singlecontact pitch from source to drain). This proportional expansion of eachcomponent along the fin is not necessarily the best option, but for afinFET block pitch equal to 2(lambda), each of the source/drainterminals, the spacers and the gate, might be most practically sizedanywhere from 0.25 contact pitch to 1.5 contact pitch, where their sumis 2 contact pitches, or at least 2 contact pitches to allow forinterlayer connectors to be aligned over, and contact each of thesource, gate and drain of a single finFET. As the channel lengths insome manufacturing technologies are a function of, or otherwisecorrelate with, the gate lengths, so, the increased space allowed forgate elements in the configuration of FIG. 7B allows for longer channellengths.

For context related to current design trends, one can say theapproximate contact pitch for a 14 nm node can be 60 nm, and the contactpitch scales approximately as 0.7× with each subsequent technology node.In these small dimensions, channel lengths can become a limiting factorin some finFET transistor characteristics. The relaxed gate pitch of thefinFET block configuration of FIG. 7B, can be expected to provideimportant design flexibility in these circumstances.

The 1× inverter shown in FIG. 7B is laid out using end-to-end finFETblocks which can be laid out in a much smaller area than that of theinverter of FIG. 6, which is laid out using side-to-side finFET blocks.As illustrated, the inverter of FIG. 7B includes six contact pitches inthe vertical direction and two contact pitches in the horizontaldirection (including the extra column for connection of output conductor762 to higher layer conductor layers), for a total area of 6×2 contactpitches, or 12λ², or 12 grid cells. This example shows that theend-to-end finFET block layout can be used to implement 1× invertersusing one half of the layout area of a side-to-side finFET block layout,based on three parallel fins in each block.

FIG. 8 illustrates the layout of a 3× inverter using the sameside-to-side finFET block layout as used in FIG. 6, with threehorizontal fins in each block. The pull-up transistors in the p-channelblock are laid out using fins 804, 806, 808, each having a drainterminal coupled to a metal-0 conductor 820 and a source terminalcoupled to metal-0 conductor 822. The metal-0 conductor 820 is connectedto a metal-2 conductor 830, at which the output signal of the inverteris supplied. The metal-0 conductor 822 is connected to the metal-0conductor 824, which is in turn coupled to a VDD power conductor. Thepull-down transistors in the n-channel block are laid out using singlefins 805, 807,809, each having a drain terminal coupled to the metal-0conductor 820, and a source terminal coupled to the metal-0 conductor823. The metal-0 conductor 823 is connected to the metal-0 conductor825, which is in turn coupled to a VSS power conductor. The patternedgate conductor layer includes gate conductor 810 which extends acrossfins 804, 806, 808 in the p-channel block, and across the fins 805, 807,809 in the n-channel block. The gate conductor 810 which extends acrossthe p-channel block and the n-channel block in this layout, is connectedto a metal-1 connector 831, at which the input to the inverter issupplied. Gate conductors 812 and 814 are “dummy gates.” Because of theuse of the metal-0 conductors 822, 823 and 820, the pitch associatedwith these gate conductors is included in the area for the grid cells.

In this example, the total area for the layout of a 3× inverter usingside-to-side blocks, in which the fins of the standard block are fullydeployed, includes eight vertical contact pitches and three horizontalcontact pitches. The total area is therefore 8×3 contact pitches, or24λ², or 24 grid cells.

FIG. 9A illustrates a 3× inverter layout in an end-to-end finFET block,in contrast to the side-to-side layout of FIG. 8. The pull-uptransistors in the p-channel block are laid out using fins 904, 904A,904B, each having a source terminal coupled to the corresponding metal-0conductor 924, 924A, 924B, and a drain terminal coupled to thecorresponding metal-0 conductor 920, 920A, 920B. The metal-0 conductors920, 920A, 920B are connected to a metal-2 conductor 930, at which theoutput signal of the inverter is supplied. The metal-0 conductors 924,924A, 924B are connected to a VDD power conductor, which can be routedthrough other patterned conductor layers. The pull-down transistor inthe n-channel block is laid out using the fins 905, 905A, 905B, eachhaving a drain terminal coupled to the corresponding metal-0 conductor920, 920A, 920B and a source terminal coupled to the correspondingmetal-0 conductor 925, 925A, 925B. The metal-0 conductors 925, 925A,925B are connected to a VSS power conductor. The patterned gateconductor layer includes gate conductor 908 in the p-channel block, anda gate conductor 910 in the n-channel block. The gate conductor 908 andthe gate conductor 910 are arranged in parallel. Gate conductor 908crosses over the fins 904, 904A, 904B in the p-channel block. Gateconductor 910 crosses over the fins 905, 905A, 905B in the n-channelblock. The metal-0 layer 928 is connected from the gate conductor 908 tothe gate conductor 910. The metal-0 conductor 928 is connected to ametal-1 conductor 931, at which the input to the inverter is supplied.

As illustrated, the inverter of FIG. 9A includes four contact pitches inthe vertical direction and four contact pitches in the horizontaldirection, for a total area of 4×4 contact pitches, or 16λ². Thisexample shows that the end-to-end finFET block layout can be used toimplement 3× inverters using two-thirds of the layout area of aside-to-side finFET block layout, based on three parallel side-by-sidefins in each block.

FIGS. 7A and 7B and FIG. 9A illustrate grid layouts for structures thatcan be used to specify functional cells in a finFET functional celllibrary. The grid layout has grid cells which provide area allocated forthe layout for features of the finFET transistors to be used inimplementations of functional cells. The size of a grid cell can bebased on the horizontal and vertical contact pitches as mentioned above,or on the sizes of other features to be used in the transistors. A gridcell therefore is a unit of area in a layout for features of a finFETblock as described herein. A functional cell on the other hand, asdescribed herein is a circuit that can include finFETs, stored in afunctional cell library that can be implemented using the finFET blocks.

Referring to FIG. 9A, a first block includes a first set ofsemiconductor fins (904, 904A, 904B) arranged on a grid pattern havingfirst and second axes (i.e. y-axis and x-axis), the semiconductor finsin the first set being aligned parallel with the y-axis of the grid, andhave a x-axis pitch. A second block including a second set ofsemiconductor fins (905, 905A, 905B) arranged on the grid pattern, thefins in the second set of fins being aligned parallel with the y-axis ofthe grid, and having the x-axis pitch. As mentioned above, both they-axis and x-axis pitches are labeled λ on the Figures, but can havedifferent sizes in some implementations. A patterned gate conductorlayer includes gate conductors crossing fins in the first and secondsets of fins, the gate conductors are disposed on a line parallel withthe x-axis of the grid. A plurality of patterned conductor layers(metal-0, metal-1, metal-2), includes one or more conductive conductors.A plurality of interlayer connectors includes conductors arranged toconnect semiconductor fins, gate elements, and conductors in theplurality of patterned conductor layers. Grid cells on the grid patternhave a y-axis pitch and an x-axis pitch. The sizes of the y-axis andx-axis pitches provide at least the area required by the interlayerconnectors, and otherwise provide area required for a feature of thefinFET structure that limits the grid cell size. The semiconductor finsin the first and second sets are spaced along the x-axis by the x-axispitch. The semiconductor fins in the first and second sets have lengthsthat are about the same as one y-axis pitch in the layout architectureof FIG. 9A.

Also, the inter-block isolation structure (not shown) has a width thatis the same as the y-axis pitch in this example. In other embodiments,the inter-block isolation structure can have a width that is an integermultiple of the y-axis pitch, or can have a width that is a non-integermultiple of the y-axis pitch.

FIG. 9B illustrates a layout for a 3× inverter functional cell inrelaxed-gate length, end-to-end finFET blocks, in contrast to theside-to-side layout of FIG. 8, which can be compared to the end-to-endlayout of FIG. 9A, which relies upon shorter fins. For the layout ofFIG. 9B, the pull-up transistors in the p-channel block are laid outusing fins 950, 950A, 950B, each having a drain terminal coupled to thecorresponding metal-0 conductor 954, 954A, 954B, and a source terminalcoupled in common to the metal-0 VDD power conductor 952. The metal-0conductors 954, 954A, 954B are connected to a metal-1 conductor 960, atwhich the output signal of the inverter is supplied. The pull-downtransistors in the n-channel block are laid out using the fins 951,951A, 951B, each having a drain terminal coupled to the correspondingmetal-0 conductor 954, 954A, 954B and a source terminal coupled to theVSS power conductor 953 in metal-0. The patterned gate conductor layerincludes gate conductor 956, including gate elements on each of the fins950, 950A, 950B in the p-channel block, and a gate conductor 955including gate elements on each of the fins 951, 951A, 951B in then-channel block. The gate conductor 956 and the gate conductor 955 arearranged in parallel. The metal-2 conductor 961 is connected from thegate conductor 956 to the gate conductor 955, in the area overlying theend-to-end fins 951B and 950B. The input to the inverter is connected tothe metal-1 conductor 961, by routing that suits the particularimplementation. The metal-2 conductor 960 is connected to the metal-0conductors 954, 954A, 954B, at which the output to the inverter issupplied, in this example. As can be seen, compared to the layout of theend-to-end finFET configuration of FIG. 9A, the configuration of FIG. 9Bsaves the x-axis pitch required for the inter-block metal-0 gateconnection on conductor 928 in FIG. 9A, at the expense of additionaly-axis pitch, and does not require the extra pitch for connection of theoutput 760 to higher layer conductors (as does the layout of FIG. 7B).In many functional cells, including cells having a larger number ofgate-to-gate connections, the extra y-axis pitch of the configuration ofFIG. 9B, compared to that of FIG. 9A, can be more than offset. In someembodiments, gate-to-gate connections in metal-0, that are disposed inparallel with the fins and consume horizontal pitch, can be used inrelaxed-gate length configurations as well.

The 3× inverter shown in FIG. 9B is laid out using the relaxed-gatelength, end-to-end finFET blocks as described with reference to FIG. 7Babove, which requires a much smaller area than that of the inverter ofFIG. 8 laid out using side-to-side finFET blocks. As illustrated, theinverter of FIG. 9B includes six contact pitches in the verticaldirection and three contact pitches in the horizontal direction, for atotal area of 6×3 contact pitches, or 18λ². This example shows that therelaxed-gate length, end-to-end finFET block layout can be used toimplement 3× inverters using three-quarters of the layout area of aside-to-side finFET block layout, based on three parallel side-by-sidefins in each block. The area savings achieved using end-to-end finFETblocks instead of side-to-side finFET blocks depends on the particularfunctional cell being formed, and is likely to diminish as the number offinFETs in the functional cell increases. For inverters, the savings inarea is a function of the number of fins used, the number of fins forwhich area is allocated in the side-to-side block being compared to theend-to-end block, and the number of gate conductors for which area isallocated in the end-to-end layout. In the layout of smaller functionalcells, such as the 1× inverter of FIG. 7A and FIG. 7B, and 3× inverterof FIGS. 9A and 9B, end-to-end architectures can be implemented with agreater area savings than can be gained for some larger cells. Thus, itis expected that the technology can be used to implement a givencircuit, where there are a significant number of small cells in aslittle as half the area of that needed for side-to-side embodiments.These savings in area are achieved while also improving the mechanicalstability of the fins, and reducing undesirable stress proximityeffects.

FIG. 9A includes cross-section indicator 10-10 indicating a verticalline of cross-section through the fins 904, 905 which is shown in FIG.10; cross-section indicator 11-11 indicating a horizontal line ofcross-section across the fins 905, 905A, 905B through the drainterminals of the transistors in the n-channel block which is shown inFIG. 11; and cross-section indicator 12-12 indicating a horizontal lineof cross-section along the gate conductor 908 in the p-channel blockwhich is shown in FIG. 12.

FIG. 10 illustrates in a simplified cross-section, the first fin 904 inthe p-channel block, and the second fin 905 in the n-channel block fromthe layout of FIG. 9A, where the fin 904 and the fin 905 are arrangedend-to-end. An isolation structure 940, which comprises an insulatorfilled trench separates fin 904 from fin 905. The gate conductors 908and 910 overlie the channel regions on the fins 904, 905, with gatedielectric layers separating them from the fins. Metal-0 conductor 920is connected from the drain that includes stressor structure 950 on thefin 904, to the drain that includes stressor structure 951 on the fin905. For the purposes of this description, the source and drainterminals of the finFETs can be referred to as “source/drain regions,”as their role as source or drain can depend on the configuration of thefunctional cell, rather than on their position on the finFET structure.A stressor structure 950 is incorporated into the fin 904, and inducesstress in the channel region of the transistor. The stressor structure950 for a p-channel finFET can be a lattice mismatch structure, such asan epitaxially grown silicon-germanium crystal with p-type doping toform a drain. The stressor structure 951 for an n-channel finFET can bea lattice mismatch structure, such as an epitaxially grownsilicon-carbon crystal with n-type doping to form a drain. An insulatingfill 960 is illustrated, which covers the fins, the gate conductors 908and 910, and the metal-0 conductor 920. Metal-0 conductors 924 and 925are illustrated on the edge of the cross-section, coupled to stressorstructures formed on the source terminals of the fins, which likewiseinduce stress in the channel region. The cross-section of FIG. 10illustrates the structures along the fin for a single finFET, whichinclude the source/drain terminals having an average length along thefin of “S/D”, the gate having a length along the fin of “G”, thegate/source spacer and the gate/drain spacer (which appear as spacebetween the gate element and the stressors in FIG. 10), having anaverage length along the fin of “Sp”, as discussed above. The length ofa combination of the source, drain and channel regions in a singlefinFET along a fin, thus includes 2*S/D+G+2*Sp, in this example. ThefinFET block pitch for a single finFET block, in which source/drainterminals can be shared by adjacent finFETs, can be S/D+G+2*Sp perfinFET, plus possibly a factor allowing for the width of the inter-blockinsulator. The length of the finFET block pitch can be a function of thecontact pitch as described above, requiring a length of at least twocontact pitches for relaxed gate pitch implementations (with a thirdcontact pitch shared with adjacent finFET block), and a pitch of atleast one contact pitch for short channel finFET implementations (with asecond contact pitch shared with adjacent finFET block).

FIG. 11 illustrates in a simplified cross-section, the structure of thefins in the drain regions of the n-channel block. As illustrated, thefins 905, 905A and 905B have stressor structures 951, 951A, 951B in thedrain regions, which can be formed in a recessed portion of the fins905, 905A, 905B. Shallow trench isolation structures 970, 971 separatethe fins. Metal-0 conductors 920, 920A and 920B overlie and contact thedrain regions, including the stressor structures. The fins 905, 905A,905B in this example protrude from a p-type substrate 1000. N-typedoping is applied in the drain regions to form n-channel devices in then-channel block.

FIG. 12 illustrates in a simplified cross-section, the structure of thefins beneath the gate conductor 908 in the p-channel block. Asillustrated, the fins 904, 904A and 904B are formed in and protrudedfrom an n-type well in the p-type substrate 1000. Shallow trenchisolation structures 970, 971 separate the fins. A gate dielectric layer954 overlies the sides and the tops of the fins above the top surfacesof the shallow trench isolation structures. The gate conductor 908 wrapsaround the sides and the tops of the fins to form the finFET transistorstructure. The cross-sections of FIGS. 10-12 illustrate the structureused in the layout shown in FIG. 9A. The relaxed-gate length structureused in the layout of FIG. 9B can be the same, with the exception thatthe width of the gate elements 908, 910 and the length of the fins 904,905 as seen in FIG. 10 can be longer.

FIG. 13 illustrates the layout in a side-by-side finFET configurationhaving a three-fin block like that of FIG. 6, for a three-input NANDgate functional cell, which is representative of a more complexfunctional cell in a cell library. For the three-input NAND gate, thefin 1000 in the p-channel block and the fin 1001 in the re-channel blockare utilized. The space in the configuration for additional fins,represented by the regions 1002 and 1003 is wasted. The patterned gateconductor layer includes gate conductors 1004, 1005, 1006, 1007, and1008 which extend along the y-axis across the fins 1000 and 1001. Athree-input NAND gate includes three pull-up transistors in parallelbetween the metal-0 VDD power conductor 1010 and the output on metal-1conductor 1017. The three-input NAND gate includes three pull-downtransistors in series between the output on metal-1 conductor 1017, andthe metal-0 VSS power conductor 1011.

In the p-channel block, the metal-0 conductors 1015 and 1016 areconnected to the output metal-1 conductor 1017, and to the semiconductorfin 1000. Metal-0 conductors 1012 and 1014 are connected to the VDDpower conductor 1010 and to the semiconductor fin 1000. Parallel finFETtransistors are disposed along fin 1000, including a finFET between themetal-0 conductor 1012 and the metal-0 conductor 1015, a finFET betweenthe metal-0 conductor 1014 and the metal-0 conductor 1015 and a finFETbetween the metal-0 conductor 1014 and the metal-0 conductor 1016. Inthe re-channel block, the metal-0 conductor 1013 is connected betweenthe fin 1001 and the VSS power conductor 1011. The metal-0 conductor1016 is connected to the fin 1001 and to the output metal-1 conductor.Three series finFET transistors are disposed along the fin 1001 betweenthe metal-0 conductor 1013 and the metal-0 conductor 1016. The gateconductors 1007, 1006, 1005 each provide gate elements for one of theparallel p-channel transistors and for one of the series n-channeltransistors. Inputs to the three-input NAND gate are formed at themetal-1 contacts 1018, 1019 and 1020 which are disposed on the gateconductors 1007, 1006, 1005, respectively.

The area utilized to implement a three-input NAND gate as shown in FIG.13 includes eight vertical contact pitches and five horizontal contactpitches, or a total area of 8λ×5λ, which is equal to 40λ² or 40 gridcells.

FIG. 14 illustrates the layout of a relaxed-gate length, end-to-endfinFET configuration for a three-input NAND gate for comparison to theside-by-side layout of FIG. 13. The three parallel p-channel pull-upfinFET transistors are implemented on the fins 1100, 1100A and 1100B.First ends (proximal to the inter-block isolation structure) of the fins1100, 1100A and 1100B are connected to the metal-0 conductor 1106. Thesecond ends of the fins 1100, 1100A and 1100B are connected to themetal-0 VDD power conductor 1104. The three series n-channel pull-downfinFET transistors are implemented on the fins 1101, 1101A and 1101B.The first ends (proximal to the inter-block isolation structure) of thefins 1101A and 1101B are connected together by metal-0 conductor 1109.The second end of the fin 1101B is connected to the VSS power conductor1105. The second ends of the fins 1101 and 1101A are connected in commonto the metal-0 conductor 1107. The first end (proximal to theinter-block isolation structure) of the fin 1101 is connected to themetal-0 conductor 1108, which is in turn connected to the metal-0conductor 1106. Gate elements 1102, 1102A and 1102B are disposed on thep-channel fins 1100, 1100A and 1100B, respectively. Also, gate elements1103, 1103A and 1103B are disposed on the n-channel fins 1101, 1101A and1101B, respectively. Metal-1 conductors 1110 and 1111 connect the gateelement 1102B with the gate element 1103B, and the gate element 1102Awith the gate element 1103A. A metal-2 conductor 1112 is used to connectthe gate element 1102 with the gate element 1103. The output is suppliedon the metal-1 conductor 1114 which is connected to the metal-0conductor 1108 and partly underlies the metal-2 connector 1112. Becauseconductor 1112 overlies the conductor 1114, the layout for this NANDcell could require an extra horizontal contact pitch, to allow forconnection of the output conductor in this configuration to higher layerpatterned conductors, because it may be difficult to utilize theadjacent fin for another functional cell.

The area utilized to implement a three-input NAND gate functional cell,as shown in FIG. 14 counting the extra horizontal contact pitch,includes six vertical contact pitches and four horizontal contactpitches, or a total area of 6λ×4λ, which is equal to 24λ² or 24 gridcells. As the size of the NAND cell increases, the percentage increasein area required for this extra column for connection of the output tohigher metal layers becomes smaller. So, a four input NAND gate,requiring 4 fins and one extra column, can be configured in this formwith a total area of 30 grid cells, and so on. Thus, an end-to-endfinFET configuration with relaxed gate pitch (allowing for longerchannels, or other benefits) can result in a savings area of close toone half for a three-input NAND gate, as compared to the side-by-sidelayout shown in FIG. 13. Implementation of a three-input NAND gate usingan end-to-end finFET configuration like that of FIG. 7A could consumeadditional horizontal pitch to allow space for the connection betweenthe gate elements in the p-channel and the n-channel blocks, and mightnot save as much space as the relaxed-gate length, end-to-endconfiguration shown in FIG. 14.

FIG. 13 illustrates an embodiment of a finFET array based on anend-to-end layout architecture with a one-transistor configuration, inwhich the fins have lengths configured for only one finFET transistoreach. The lengths of the fins arranged for one transistor each can beconfigured on a layout grid for one source region, one channel region,and one drain region each. The layout grid for sets of fins in thisone-transistor configuration can be set up to allow for only one gateconductor crossing each fin, and for two contacts, such as one metal-0contact in each of the source and drain regions. This can result,referring to FIG. 7A, for example, in a finFET block that has a verticalblock pitch that is equal to twice the contact pitch λ. So, theone-transistor configuration of the end-to-end architecture can fit in alayout grid with vertical block pitch of 2λ, assuming that theinter-block isolation structure can be implemented within a singlecontact pitch.

Alternatively, for relaxed gate pitch configurations, one-transistorconfiguration can be set up to allow for only one gate conductorcrossing each fin, and for three contacts, such as an interlayer contactin each of the source and drain regions, and on the gate. This canresult, referring to FIG. 7B, for example, in a finFET block that has avertical block pitch that is equal to three times the contact pitch λ.So, the one-transistor configuration of the end-to-end architecture canfit in a layout grid with vertical block pitch of 3λ, assuming that theinter-block isolation structure can be implemented within a singlecontact pitch.

In some embodiments of a one-transistor configuration of the end-to-endarchitecture, the structure of the finFET transistors throughout thearray can be very uniform. As result, the performance of the finFETtransistors is more uniform, so that a circuit design relying on thearchitecture can have reduced variation among the devices on theintegrated circuit.

The layout in FIG. 15 illustrates a repeatable pattern of end-to-endfinFET blocks arranged in mirror image so as to share the pitchassociated with the contacts for power conductors or power connectionsto the fins, supporting high density layout of library cells. The layoutillustrated in FIG. 15 can be used for short gate and relaxed gatefinFET configurations described herein, and for other end-to-endconfigurations.

The pattern in FIG. 15 includes, in sequence on the layout, n-channelblock 1, p-channel block 1, p-channel block 2, n-channel block 2,n-channel block 3, and p-channel block 3. Inter-block isolationstructures are formed between the n-channel block 1 and the p-channelblock 1, between the p-channel block 2 and the n-channel block 2, andbetween the n-channel block 3 and the p-channel block 3. Powerconductors for VSS are laid out on the top of the n-channel block 1, andbetween the n-channel block 2 and the n-channel block 3. Powerconductors for VDD are laid out between the p-channel block 1 and thep-channel block 2, and on the end of the p-channel block 3. The patterncan be repeated vertically and horizontally, over an extensive layoutgrid for synthesis of functional cells on an integrated circuit.

P-channel block 2 and n-channel block 2, and isolation structure 1540are referred to for the purposes of describing some of the uniformstructures in the layout. Isolation structure 1540 has opposing firstand second sides 1542, 1543, and separates the p-channel block 2 and then-channel block 2. P-channel block 2 includes a set of fins, includingfin 1524, the members of which are laid out in parallel on thesubstrate. The set of fins in p-channel block 2 have proximal ends (e.g.end 1526 on fin 1524) adjacent the first side 1542 of the isolationstructure 1540. The fins in the set of fins in the p-channel block 2(e.g. end 1328 on fin 1324) are in contact with the metal-0 VDD powerconductor 1350 in this example, or with another contact structure, andextend through the adjacent p-channel block 1.

N-channel block 2 includes a set of fins, including fin 1525, themembers of which are laid out in parallel on the substrate. The set offins in n-channel block 2 have proximal ends (e.g. end 1527 on fin 1525)adjacent the second side 1543 of the isolation structure 1540. The finsin the set of fins in the n-channel block 2 (e.g. end 1326 on fin 1325)are in contact with the metal-0 VSS power conductor 1351 in thisexample, or with another contact structure, and extend through theadjacent n-channel block 3.

As described above, the source and drain regions on the fins in both ofthe p-channel block 2 and the n-channel block 2, can include stressors(not shown in FIG. 15), like lattice mismatched epitaxially grownsemiconductor elements, that induce stress in the channel regions of thefinFETs.

In the configuration of FIG. 15, the p-channel block 2 includes a set offins in which all of the p-channel finFET transistors have a uniformstructure. As a result of the uniform structure, the dimensions of thefinFETs and supporting circuits within the block can have the same sizeswithin reasonable manufacturing tolerances. Likewise, the n-channelblock 2 includes a set of fins in which all of the n-channel finFETtransistors have a uniform structure. So, for example, all of the finsin the set of fins in the p-channel block 2 can have a uniform structurelike that shown in FIG. 10, including uniform stressor designs on eachend, uniform metal contact designs on the source and drain, a singlegate conductor between the stressors, the same distance between thecontacts on the source and drain, the same fin width and fin height, anda uniform inter-block isolation structure design. As a result of theuniform structure, the finFETs have the same designs and same sizes, andthe finFETs in the block can have dynamic characteristics, such asstress induced in the channel, with a very tight range of variationacross the block.

Thus, FIG. 15 shows an example of a structure wherein the members of afirst set of semiconductor fins (p-channel block 2) have lengthsconfigured for formation of a single finFET in each block. In thisexample, each semiconductor fin extends across two blocks of the sametype (e.g., p-channel block 1 through p-channel block 2, and n-channelblock 2 through n-channel block 3). One end of a semiconductor fin (e.g.1524) that extends across p-channel block 2 and p-channel block 1 isadjacent to the inter-block isolation structure 1540, while the otherend is adjacent to the inter-block isolation structure 1545. In thisconfiguration, the finFETs in each p-channel block (e.g., p-channelblock 2) include first uniform structures (in region 1560-2) betweeninter-block isolation structure 1540 and the first gate conductor 1530and second uniform structures (in region 1563-2) between the VDD powerconductor 1550 (or other metal-0 structure) and the gate conductor 1530.The finFETs in p-channel block 1 also have uniform structures, arrangedin mirror image layout to those of p-channel block 2. One end of asemiconductor fin (e.g. 1525) that extends across n-channel block 2 andn-channel block 3 is adjacent to the inter-block isolation structure1540, while the other end is adjacent to the inter-block isolationstructure 1546. In this configuration, the finFETs in each re-channelblock (e.g., n-channel block 2) including third uniform structures (inregion 1562-2) between inter-block isolation structure 1540 and thesecond gate conductor 1531 and fourth uniform structures (in region1565-2) between the VSS power conductor 1551 (or other metal-0structure) and the second gate conductor 1531. As mentioned above, thefirst, second, third and fourth uniform structures can includestressors.

The structures in p-channel block 2 and in n-channel block 2 can becopied in a plurality of other blocks arranged as shown in FIG. 15.Thus, the structures between the ends of the fins and the correspondinggate conductors in the regions 1560-1 and 1560-3 can be uniform with thestructures in region 1560-2, though those in region 1560-2 are laid outin mirror image with those in regions 1560-1 and 1560-3. Likewise thestructures between the corresponding metal-0 power conductors (or othermetal-0 structures) and the corresponding gate conductors in regions1563-1 and 1563-3 can be uniform with the structures in region 1563-2.The structures in regions 1562-1 and 1562-3 can be uniform with thestructures in region 1562-2. The structures in regions 1565-1 and 1565-3can be uniform with the structures in region 1565-2.

In FIG. 15, the p-channel blocks and the n-channel blocks are configuredfor a single finFET on each semiconductor fin between the powerconductor and the inter-block isolation structure. In other embodiments,the p-channel blocks and the re-channel blocks are configured for morethan one finFET on each semiconductor fin between the power conductorand the inter-block isolation structure, while preserving the advantagesachieved from the uniformity of the structures across the layout. Insome embodiments having more than two gate elements on a given finbetween inter-block isolation structures, the power conductor coupled toa particular finFET on a given fin can be located anywhere along thefin, using interlayer connectors to connect vertically to a patternedmetal conductor, for example that acts as a power conductor or as aconnection to a power conductor located elsewhere on the layout. Thesingle finFET configuration can result in efficiencies in theimplementation of library cells that conserve space, particularly forsmaller library cells. In some implementations, single finFET blocks andmultiple finFET blocks can be disposed on a single integrated circuit.Also, in some implementations combinations of end-to-end finFET blockswith and without the long channel structure can be disposed on a singleintegrated circuit. Also, in some implementations combinations ofend-to-end finFET blocks with and without the long channel structure,and side-by-side finFET blocks can be disposed on a single integratedcircuit.

FIGS. 16A and 16B are provided to illustrate alternative configurationsfor the end-to-end finFETs. The semiconductor fins in FIGS. 16A and 16Bare rotated 90° for the purposes of this description, relative to thearrangement shown in FIG. 15. FIG. 16A illustrates a semiconductor fin1600. From left to right in the drawing, along the direction of thesemiconductor fin, a metal-0 conductor 1601, a gate conductor 1602, ametal-0 conductor 1603, and a gate conductor 1604, and a metal-0conductor 1605 cross over the fin. Channel regions along the fin 1600are beneath the gate conductors 1602 and 1604, and have channel lengthsthat correlate with the lengths of the gate conductors 1602 and 1604along the direction of the fin. These lengths can be quite small fordense finFET structures. For the purposes of showing the areas allowedin the layout for this illustration, a metal-2 conductor 1611 overliesand is connected to the metal-0 conductor 1601, via the interlayerconnector 1622. A metal-1 conductor 1613 overlies and is connected tothe metal-0 conductor 1603, via the interlayer connector 1623. A metal-1conductor 1615 overlies and is connected to the metal-0 conductor 1605,via the interlayer connector 1625. The length of the fin 1600 issufficient to allow for the contact pitch of the three interlayerconnectors 1622, 1623, 1625, which allow for making connection to thefins in the source/drain regions of the finFETs implemented along thefin. There is not sufficient room in the layout for interlayerconnectors on the gate elements 1602 and 1604 in this example. Using asingle finFET per block layout like that discussed with reference toFIG. 15, the metal-0 conductor 1603 can correspond to a power conductor,such as the VDD bus 1550.

FIG. 16B illustrates a semiconductor fin 1650 in a relaxed gate pitchconfiguration. From left to right in the drawing, along the direction ofthe semiconductor fin, a metal-0 conductor 1651, a gate conductor 1652,a metal-0 conductor 1653, a gate conductor 1654, and a metal-0 conductor1655 cross over the fin. Channel regions along the fin 1650 are beneaththe gate conductors 1652 and 1654, and have channel lengths thatcorrelate with the lengths of the gate conductors 1652 and 1654 alongthe direction of the fin. These gate lengths can be longer than thoseallowed in the configuration of FIG. 16A. For the purposes of showingthe areas allowed the layout for this illustration, a metal-2 conductor1661 overlies and is connected to the metal-0 conductor 1651, via theinterlayer connector 1671. A metal-1 conductor 1662 overlies and isconnected to the gate conductors 1652 via the interlayer connector 1672.A metal-1 conductor 1663 overlies and is connected to the metal-0conductor 1653 via the interlayer connector 1673. The metal-2 conductor1664 overlies and is connected to the gate conductor 1654 via theinterlayer connector 1664. A metal-1 conductor 1665 overlies and isconnected to the metal-0 conductor 1655 via the interlayer connector1665. The length of the fin 1650 is sufficient to allow for the contactpitch of the five interlayer connectors 1671-1675, which allow formaking connection to the fins in the source/drain regions and in thegate/channel regions of the finFETs implemented along the fin. Using asingle finFET per block layout like that discussed with reference toFIG. 15, the metal-0 conductor 1653 can correspond to a power conductor,such as the VDD bus 1550. The layout of FIG. 16B includes interlayerconnectors which are aligned over the corresponding semiconductor finsand are connected to the gate conductors, as well as interlayerconnectors which are aligned over the corresponding semiconductor fins,and are connected to the source/drain regions (with or without a metal-0conductor) on the semiconductor fins. The interlayer connectors arealigned over the corresponding semiconductor fins in the sense that theinterlayer connectors are laid out within the tolerance of thelithographic system to land on the fins or on the source/drain regions.The contact pitch accounts for the sizes of the interlayer connectors,as well as spacing and alignment tolerances of the manufacturing systemused to implement them.

The fins as shown in FIGS. 16A and 16B are configured for two finFETseach, where one finFET lies in each adjacent block of the layout (e.g.one finFET in each of p-channel block 1 and p-channel block 2 of FIG.15). In other embodiments, the fins can be configured for more than twofinFETs each, and the power conductors can be located anywhere along thefin as discussed above.

FIG. 17 is a simplified flow diagram of a process for designing a finFETblock-based cell for a cell library. The method may be performed, forexample, by an interactive software tool that is used by a cell designerto create a library of cells. The order of the steps can be modified assuits a particular design. According to the simplified flow diagram, afunctional cell to be included in a cell library is selected (1700).Such a functional cell can be an inverter as described above, aflip-flop, logic gates, logic blocks or other cell structures. Next,finFET blocks are specified, including end-to-end blocks, and optionallyside-to-side blocks, assuming CMOS technology, for n-channel andp-channel devices (1701). User input may specify the shape and locationof objects in the cell (e.g., cell boundary, location and width of powerconductors, gates, active areas) and so on. For end-to-end blocks, thefins can be considered to be arranged in columns. Then, the patternedgate conductor layer is specified, to form gates in rows overlying thefins that will be used in the cell (1702). Then, the patterned conductorlayers are specified, to establish appropriate interconnections,preferably including a layer having conductors arranged in columns, anda layer having conductors arranged in rows (1703). The plurality ofpatterned conductor layers includes power conductors. Then theinterlayer connections are specified, to locate connections among thefins, the gate conductors and the conductors in the one or morepatterned conductor layers (1704). The specifications produced in thismethod comprise layout files implemented in a GDS II format databasefile representing the specified planar shapes of the elements, or othercomputer readable format. The specified cells are then stored in a celllibrary for use in integrated circuit design (1705). The process may berepeated to generate a cell library that includes a large number ofstandard cells implementing different functions.

FIG. 18 is a flowchart for a representative design automation processwhich can be implemented as logic executed by a system like thatrepresented by FIG. 2, including a finFET block library having cellsimplemented using at least one end-to-end finFET block as describedherein. According to a first step of the process, a data structure thatdefines a circuit description, such as a netlist, is traversed in dataprocessing system (1800). A cell library stored in a database or othercomputer readable medium coupled with the data processing system, thatincludes end-to-end finFET block-based cells as described herein, isaccessed by the data processing system, and utilized to match cells inthe library with the elements of the circuit description (1801). Thematched cells are then placed and routed for an integrated circuitlayout (1802). Next, design verification and testing is executed (1803).Finally, end-to-end finFET block cells can be modified to optimizetiming or power specifications for the circuit (1804). The modificationsof the finFET block cells can comprise mask changes that result inchanges to the conductors in the patterned conductor layers, and in thepattern of interlayer connectors, to change the number of fins utilizedin a particular transistor. These changes can be accomplished in someinstances without changing the area on the integrated circuit occupiedby the block in which the cell is located.

A finFET block architecture described above can be utilized to create aflexible library that comprises a plurality of end-to-end finFETblock-based cells.

The problem of bent or warped fins can be avoided using isolationstructures as described herein.

The finFET blocks described herein can be arranged in a repeatingpattern of n-channel blocks and p-channel blocks, allowing for flexibleimplementation of CMOS circuit elements utilizing complementary portionsin blocks above and below a particular block, where at least a centralblock includes a plurality of power conductors overlying the block.

The finFET block architecture described herein allows for very densearea utilization with flexible layout strategies. The technology can besuited for implementation of gate arrays, field programmable gatearrays, “sea of gates” architectures and other high density and/or highperformance integrated circuit structures.

The flexible layout in orthogonal pattern structures makes theend-to-end finFET blocks described herein ideal for implementingengineering change orders for size changes, or other modifications,during design verification processes during integrated circuit designand manufacturing.

The finFET block architecture described herein can be implemented withmixed block heights and block widths, so that variable sized blocks canbe utilized, as suits the needs of a particular design goal.

In general, the creation of a finFET block-based flexible library isenabled using the finFET block architecture described herein. In suchlibrary, the standard cells can consist of “soft macros” that could bepopulated with some flexibility as to the exact location of theirunderlying elements. Unlike planar CMOS structures, where thegranularity for modifications or adjustments of the cells is the wholetransistor, in finFET block architectures as described herein, thegranularity can be the fin. Designing finFET block structures using asubset of the fins arranged in parallel in a block provides for designflexibility.

A library can be comprised of a plurality of finFET block-basedfunctional ells which exploits subsets of the available fins in thefinFET blocks, leaving room for optimization procedures that do notalter the area of the layout. The library can be designed applying aminimum granularity to a single fin in the block for a gate conductoralong a column traversing a block of horizontal fins, rather than all ofthe fins in the block.

The end-to-end finFET block layout described herein takes advantage ofthe quantized gate width of the finFET library block, whilesubstantially reducing variations transistor performance from theproximity of asymmetric structures and substantially reducing theproblems with mechanical stability that arise as the dimensions shrink.The end-to-end finFET block layout allows formation of narrower fins,thereby reducing off-state leakage of the transistors. In addition,end-to-end finFET block layouts can reduce chip area consumed by thecircuitry implemented using the blocks by amounts on the order ofone-half.

FinFET libraries with can include functional cells as described hereinwith a relaxed gate pitch, and thus long channel lengths, relative tothe layout pitch, while achieving densities that exceed prior art finFETblock architectures.

Using end-to-end finFET configurations, including the relaxed-gatelength configurations described above that allow room for interlayerconnection to gate terminals, can lead to reductions in chip area by asmuch as one half for some circuits. Cutting logic chip area in halfgives competitive advantage in semiconductor costs. In addition,relaxing the channel length, using a relaxed-gate length configuration,extends the transistor density roadmap for advancing technologies.Increasing, or doubling, source to drain pitch improves stressengineering, allowing larger silicon germanium and silicon carbonstressors, for example, and suppresses random variability (because oflonger channel lengths available) in transistor performance.

While the present invention is disclosed by reference to the preferredembodiments and examples detailed above, it is to be understood thatthese examples are intended in an illustrative rather than in a limitingsense. It is contemplated that modifications and combinations willreadily occur to those skilled in the art, which modifications andcombinations will be within the spirit of the invention and the scope ofthe following claims. What is claimed is:

1. An integrated circuit, comprising: a substrate; a first set ofsemiconductor fins aligned in a first direction on the substrate, one ormore of the semiconductor fins in the first set including at least onechannel region and at least two source/drain regions of finFETs; asecond set of semiconductor fins aligned in the first direction on thesubstrate one or more of the semiconductor fins in the second setincluding at least one channel region and at least two source/drainregions of finFETs; an inter-block isolation structure on the substratehaving a first side and a second side, and wherein semiconductor fins inthe first set have ends proximal to the first side of the inter-blockisolation structure and semiconductor fins in the second set have endsproximal to the second side of the inter-block isolation structure; anda patterned gate conductor layer including a plurality of gate elementson corresponding fins in the first and second sets of semiconductorfins, the gate elements being disposed over channel regions of thecorresponding semiconductor fins; at least one patterned conductor layeroverlying the patterned gate conductor layer; and a plurality ofinterlayer connectors, including interlayer connectors aligned overcorresponding semiconductor fins in the first and second sets andconnected to the gate elements of particular finFETs on thecorresponding fins.
 2. The integrated circuit of claim 1, wherein theinterlayer connectors have first axis and second axis contact pitches,where the first axis is aligned in the first direction and the secondaxis is perpendicular to the first axis; and said at least one channelregion and said at least two source/drain regions have in combinationthree times the first axis contact pitch.
 3. The integrated circuit ofclaim 1, wherein including interlayer connectors aligned over andconnected to one or both of the source/drain regions of the particularfinFETs.
 4. The integrated circuit of claim 1, including an additionalpatterned conductor layer beneath said at least one patterned conductorlayer.
 5. The integrated circuit of claim 1, wherein the channel regionsin the first set are n-channel and the channel regions in the second setare p-channel.
 6. The integrated circuit of claim 1, includinginterlayer connectors aligned over corresponding semiconductor fins inthe first and second sets which connect to two source/drain regions onone finFET on a semiconductor fin in the first and second sets of fins.7. The integrated circuit of claim 1, wherein the source/drain regionson the semiconductor fins for finFETs on the first set of semiconductorfins have uniform structures, and the source/drain regions on thesemiconductor fins for finFETs on the second set of semiconductor finshave uniform structures.
 8. The integrated circuit of claim 1,including: a plurality of patterned conductor layers, including said atleast one patterned conductor layer, one or more conductors in theplurality of patterned conductor layers and the interlayer connectorsbeing arranged to connect a semiconductor fin in the first set to asemiconductor fin in the second set, arranged to connect a first gateelement on a semiconductor fin in the first set with a second gateelement on a semiconductor fin in the second set, and arranged toconnect a power conductor to at least one semiconductor fin in one ofthe first and second sets.
 9. The integrated circuit of claim 1, whereinsemiconductor fins in the second set are aligned end-to-end withsemiconductor fins in the first set.
 10. The integrated circuit of claim1, including stressor structures on the first and second ends of thesemiconductor fins in the first and second sets.